{"product_id":"ieej-20250128e00801-001","title":"Mid-infrared detection using Si-technology compatible plasmon enhanced Schottky structure","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e研究会(論文単位)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e論文No: \u003c\/strong\u003eMSS25001\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【E】センサ・マイクロマシン部門 マイクロマシン・センサシステム研究会\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2025\/01\/28\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003eMid-infrared detection using Si-technology compatible plasmon enhanced Schottky structure\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003eElyas Ashenafi(The University of Electro-communications),Tetsuo Kan(The University of Electro-communications)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eAshenafi Elyas(The University of Electro-communications),Kan Tetsuo(The University of Electro-communications)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eMid-infrared|Schottky|Sensors|Photodetector|Si-technology|Mid-infrared|Schottky|Sensors|Photodetector|Si-technology\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(日本語): \u003c\/strong\u003eMid-infrared detectors are crucial in different sensing applications, such as gas and chemical spectroscopy. However, conventional mid-IR detectors, typically based on low band gap compound semiconductors, are based on complex fabrication processes, are u\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(英語): \u003c\/strong\u003eMid-infrared detectors are crucial in different sensing applications, such as gas and chemical spectroscopy. However, conventional mid-IR detectors, typically based on low band gap compound semiconductors, are based on complex fabrication processes, are unstable, and contain toxic elements. We, therefore, proposed a PtSi\/p-Si-based mid-IR Schottky detector fabricated using a Si-technology compatible process. Usually, silicon detectors can only detect wavelengths up to 1.1 μm, but by introducing a platinum silicide (PtSi) film, the barrier height is lowered to 0.32 eV, enabling mid-IR light detection up to 4.0 μm. The plasmonic structures are applied to enhance light absorption through surface plasmon resonance. Furthermore, this structure allows tuning the absorption wavelength across the interest wavelength. We experimentally confirmed that the developed detector is responsive to mid-IR light, and its sensitivity was enhanced at room temperature.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌: \u003c\/strong\u003e\u003ca href=\"\/products\/ieej-20250128e00801\"\u003e2025年1月31日マイクロマシン・センサシステム研究会\u003c\/a\u003e\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌掲載ページ: \u003c\/strong\u003e1-4 p\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e英語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePDFファイルサイズ: \u003c\/strong\u003e1,186 Kバイト\u003c\/p\u003e","brand":"IEEJ-P10","offers":[{"title":"冊子印刷（一般価格660円\/会員価格440円） \/ A4 \/ 4","offer_id":46408133837039,"sku":"IEEJ-20250128E00801-001-PRT","price":660.0,"currency_code":"JPY","in_stock":true},{"title":"PDFダウンロード（一般価格330円\/会員価格220円） \/ A4 \/ 4","offer_id":46408566735087,"sku":"IEEJ-20250128E00801-001-PDF","price":330.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-KENKYUKAI_8735e711-e74c-48ed-9da8-111cafbd7be6.png?v=1745232858","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-20250128e00801-001","provider":"電気学会 電子図書館","version":"1.0","type":"link"}