{"product_id":"ieej-dt11r01171130","title":"Turn-off Surge Voltage Behavior of SiC Schottky Barrier Diode","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e部門大会\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e論文No: \u003c\/strong\u003e1-130\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【D】平成23年電気学会産業応用部門大会講演論文集\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2011\/09\/06\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003eTurn-off Surge Voltage Behavior of SiC Schottky Barrier Diode\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003e山口 浩(産業技術総合研究所),Rejeki Simanjorang(産業技術総合研究所),仲川 博(産業技術総合研究所),佐藤 弘(産業技術総合研究所)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eHiroshi Yamaguchi(National Institute of Advanced Industrial Science and Technology (AIST)),Simanjorang Rejeki(National Institute of Advanced Industrial Science and Technology (AIST)),Hiroshi Nakagawa(National Institute of Advanced Industrial Science and Technology (AIST)),Hiroshi Sato(National Institute of Advanced Industrial Science and Technology (AIST))\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eHigh dv\/dt|SiC-SBDJunction capacitance|Junction capacitance|Turn-off surge voltage\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePDFファイルサイズ: \u003c\/strong\u003e7,673 Kバイト\u003c\/p\u003e","brand":"IEEJ-PDF","offers":[{"title":"PDFダウンロード（一般価格440円\/会員価格220円） \/ A4 \/ 6","offer_id":46405538414831,"sku":"IEEJ-DT11R01171130-PDF","price":440.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-PDF_707eb894-4ecd-42d6-8020-896654891554.png?v=1745101142","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-dt11r01171130","provider":"電気学会 電子図書館","version":"1.0","type":"link"}