{"product_id":"ieej-ed16213","title":"Performance comparison between SiC- and Si-MOSFETs","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e研究会(論文単位)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e論文No: \u003c\/strong\u003eED16213\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【A】基礎・材料・共通部門 放電研究会\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2016\/10\/22\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003ePerformance comparison between SiC- and Si-MOSFETs\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003eFeng Yu(長岡技術科学大学),余 亮(長岡技術科学大学),須貝 太一(長岡技術科学大学),江 偉華(長岡技術科学大学)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eYu Feng(Nagaokaut University of Technology),Liang Yu(Nagaokaut University of Technology),Taichi Sugai(Nagaokaut University of Technology),Weihua Jiang(Nagaokaut University of Technology)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eパルスパワー|ＳＩＣ－ＭＯＳＦＥＴ|Pulsed power|SIC-MOSFET\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(日本語): \u003c\/strong\u003eSilicon carbide (SiC) power devices are expected to have wide applications to pulsed power technologies because of their superior characteristics compared with traditional silicon (Si) based devices.  In order to take full advantage of SiC devices, it is necessary to understand their characteristics and to optimize their driving circuits for pulsed power purposes.  This paper reports some initial results of experimental investigation on performance comparison between SiC and Si based power MOSFETs. \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(英語): \u003c\/strong\u003eSilicon carbide (SiC) power devices are expected to have wide applications to pulsed power technologies because of their superior characteristics compared with traditional silicon (Si) based devices.  In order to take full advantage of SiC devices, it is necessary to understand their characteristics and to optimize their driving circuits for pulsed power purposes.  This paper reports some initial results of experimental investigation on performance comparison between SiC and Si based power MOSFETs. \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e英語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePDFファイルサイズ: \u003c\/strong\u003e1,304 Kバイト\u003c\/p\u003e","brand":"IEEJ-PDF","offers":[{"title":"PDFダウンロード（一般価格330円\/会員価格220円） \/ A4 \/ 3","offer_id":46362904363247,"sku":"IEEJ-ED16213-PDF","price":330.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-PDF_bf279ac8-33c0-463d-82ff-a4da9dbae939.png?v=1743643945","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-ed16213","provider":"電気学会 電子図書館","version":"1.0","type":"link"}