{"product_id":"ieej-ppt10048","title":"Silicon Carbide Super-GTO Development and Evaluation","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e研究会(論文単位)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e論文No: \u003c\/strong\u003ePPT10048\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【A】基礎・材料・共通部門 パルスパワー研究会\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2010\/08\/05\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003eSilicon Carbide Super-GTO Development and Evaluation\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003eHeather O'Brien(U.S. Army Research Laboratory),Aderinto Ogunniyi(U.S. Army Research Laboratory),Charles J. Scozzie (U.S. Army Research Laboratory),William Shaheen(Berkeley Research Associates),Q. Jon Zhang (Cree,Inc.),Anant K. Agarwal (Cree,Inc.),Victor Temple(Silicon Power Corp.)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eHeather O'Brien(U.S. Army Research Laboratory),Aderinto Ogunniyi(U.S. Army Research Laboratory),Charles J. Scozzie (U.S. Army Research Laboratory),William Shaheen(Berkeley Research Associates),Q. Jon Zhang (Cree,Inc.),Anant K. Agarwal (Cree,Inc.),Victor Temple(Silicon Power Corp.)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(日本語): \u003c\/strong\u003eThe U.S. Army Research Laboratory has been conducting research on silicon carbide power devices in support of pulsed power Army applications. Such applications require light-weight, power-dense switches suitable for mobile platforms. While silicon-based semiconductor switches are suitable for near-term demonstrations, focus is on silicon carbide switches for future ground combat vehicles. Silicon carbide’s high breakdown field enables thinner high-voltage devices, while its shorter minority carrier lifetime allows for faster turn-off. The material’s thermal conductivity and high Young’s modulus make it ideal for high-power pulsed switching applications [1, 2].\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(英語): \u003c\/strong\u003eThe U.S. Army Research Laboratory has been conducting research on silicon carbide power devices in support of pulsed power Army applications. Such applications require light-weight, power-dense switches suitable for mobile platforms. While silicon-based semiconductor switches are suitable for near-term demonstrations, focus is on silicon carbide switches for future ground combat vehicles. Silicon carbide’s high breakdown field enables thinner high-voltage devices, while its shorter minority carrier lifetime allows for faster turn-off. The material’s thermal conductivity and high Young’s modulus make it ideal for high-power pulsed switching applications [1, 2].\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e日本語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePDFファイルサイズ: \u003c\/strong\u003e650 Kバイト\u003c\/p\u003e","brand":"IEEJ-PDF","offers":[{"title":"PDFダウンロード（一般価格330円\/会員価格220円） \/ A4 \/ 5","offer_id":46359453040879,"sku":"IEEJ-PPT10048-PDF","price":330.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-PDF_ece9f4e1-9163-447c-94e3-5a259b385f9d.png?v=1743482036","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-ppt10048","provider":"電気学会 電子図書館","version":"1.0","type":"link"}