{"product_id":"ieej-rc13108-001","title":"Designing a Low-phase-noise, Low-power-dissipation CMOS-Ring VCO according to a New Figure of Merit","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e論文誌(論文単位)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【C】電子・情報・システム部門\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2011\/08\/01\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003eDesigning a Low-phase-noise, Low-power-dissipation CMOS-Ring VCO according to a New Figure of Merit\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003eAkio Momma (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.), Jun Ogura (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.), Eiji Nishimori (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eAkio Momma (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.), Jun Ogura (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.), Eiji Nishimori (IC Design Department I, Technology Development Headquarters, New Japan Radio Co., Ltd.)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eCMOS，Phase noise，Figure of merit (FOM)，Ring oscillator，Inverter，VCO\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(英語): \u003c\/strong\u003eSince the conventional figure of merit (FOM) neglects the flicker-noise effect in a voltage-controlled oscillator (VCO), we devised a new FOM that considers the flicker-noise effect and, thus, allows phase noise (which is dominated by flicker noise) of different VCOs to be compared. Using the proposed FOM, we analyze the phase noise and power dissipation in an inverter-based ring oscillator, since it has a simple topology and few noise sources. From this analysis, we draw three conclusions: first, varying load capacitance changes oscillation frequency only without changing proposed FOM; second, to improve the proposed FOM, large transistor length should be chosen, third, comparing FOM of a VCO and FOM calculated from target specifications of phase noise and power dissipation shows that the designed VCO meets target specifications. This second and third conclusion is useful for easily designing an actual inverter-based quadrature-ring VCO. A prototype inverter-based quadrature-ring VCO was fabricated by using 0.18-μm CMOS technology with an active die area of 0.018 mm2. It consumes 2.61 mW from a 1.8-V power supply. Moreover, it has an oscillation frequency of 338.5 MHz, phase noise of -110 dBc\/Hz at 1-MHz offset frequency, and proposed FOM of 160.4 dB (at 0.1-MHz offset frequency).\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌: \u003c\/strong\u003e\u003ca href=\"\/products\/ieej-rc13108\"\u003e電気学会論文誌C（電子・情報・システム部門誌） Vol.131 No.8 （2011）\u003c\/a\u003e\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌掲載ページ: \u003c\/strong\u003e1397-1402 p\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e論文／英語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e電子版へのリンク: \u003c\/strong\u003e\u003ca target=\"_blank\" href=\"https:\/\/www.jstage.jst.go.jp\/article\/ieejeiss\/131\/8\/131_8_1397\/_article\/-char\/ja\/\"\u003ehttps:\/\/www.jstage.jst.go.jp\/article\/ieejeiss\/131\/8\/131_8_1397\/_article\/-char\/ja\/\u003c\/a\u003e\u003c\/p\u003e","brand":"IEEJ-P10","offers":[{"title":"冊子印刷（一般価格770円\/会員価格550円） \/ A4 \/ 6","offer_id":46349180207343,"sku":"IEEJ-RC13108-001-PRT","price":770.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-RC13108_25643d46-757b-4702-8bc0-23cf90813222.png?v=1747376326","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-rc13108-001","provider":"電気学会 電子図書館","version":"1.0","type":"link"}