{"product_id":"ieej-rc13611-002","title":"Ta\/Al2O3 MOSFETの反転層電子濃度の解析","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e論文誌(論文単位)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【C】電子・情報・システム部門\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2016\/11\/01\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003eAnalysis of the Inversion Layer Electron Density Distributions of Ta\/Al2O3 MOSFETs\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003e藤本　大輝（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科），片野　拓真（京都工芸繊維大学大学院工芸科学研究科）\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eTaiki Fujimoto (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology), Takuma Katano (Graduate School of Science and Technology, Kyoto Institute of Technology)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eMOSFET，High-k絶縁膜，金属ゲート，Schrodinger\/Poissonモデル，電子濃度，量子効果　　MOSFET，high-k dielectric，metal gate，Schrodinger\/Poisson model，electron density distribution，quantum effects\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(英語): \u003c\/strong\u003eThis paper investigates the electron density distributions in the inversion layer of Ta gate, Al2O3 insulator and Si substrate MOSFETs. Schrodinger\/Poisson model is used to analyze the quantum effects of the inversion layer. The electron density distributions of Ta\/Al2O3 MOSFETs are compared with those of Poly-Si\/SiO2 MOSFETs. As a result, the electrical thickness of the gate insulator is increased from 5.42 to 9.21% due to the quantum effects. It is found that the dielectric constants stlongly affect the electron density in the inversion layer.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌: \u003c\/strong\u003e\u003ca href=\"\/products\/ieej-rc13611\"\u003e電気学会論文誌C（電子・情報・システム部門誌） Vol.136 No.11 （2016） 特集：電気関係学会関西連合大会\u003c\/a\u003e\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e本誌掲載ページ: \u003c\/strong\u003e1500-1505 p\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e論文／日本語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e電子版へのリンク: \u003c\/strong\u003e\u003ca target=\"_blank\" href=\"https:\/\/www.jstage.jst.go.jp\/article\/ieejeiss\/136\/11\/136_1500\/_article\/-char\/ja\/\"\u003ehttps:\/\/www.jstage.jst.go.jp\/article\/ieejeiss\/136\/11\/136_1500\/_article\/-char\/ja\/\u003c\/a\u003e\u003c\/p\u003e","brand":"IEEJ-P10","offers":[{"title":"冊子印刷（一般価格770円\/会員価格550円） \/ A4 \/ 6","offer_id":46349971030255,"sku":"IEEJ-RC13611-002-PRT","price":770.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-RC13611_8515352c-77e5-454e-83cf-bbc89f8f569b.png?v=1743166553","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-rc13611-002","provider":"電気学会 電子図書館","version":"1.0","type":"link"}