{"product_id":"ieej-zt047142","title":"Partial Discharge Characteristics of Simulated XLPE\/EPR Cable Interface and Degradation Interpretation by Fourier Transfer Infrared Spectroscopy Analysis","description":"\u003cp\u003e\u003cstrong\u003eカテゴリ: \u003c\/strong\u003e全国大会\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e論文No: \u003c\/strong\u003e7-142\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eグループ名: \u003c\/strong\u003e【全国大会】平成16年電気学会全国大会論文集\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e発行日: \u003c\/strong\u003e2004\/03\/17\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eタイトル(英語): \u003c\/strong\u003ePartial Discharge Characteristics of Simulated XLPE\/EPR Cable Interface and Degradation Interpretation by Fourier Transfer Infrared Spectroscopy Analysis\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名: \u003c\/strong\u003eAriefYanuar Z(九州工業大学),小柳 貴寛(九州工業大学),大塚信也 (九州工業大学),松本 聡(九州工業大学),匹田 政幸(九州工業大学),水野 健彦(Fujikura Ltd.)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e著者名(英語): \u003c\/strong\u003eYanuar Z. Arief (Kyushu Institute of Technology),Takahiro Koyanagi(Kyushu Institute of Technology),Shinya Ohstuka(Kyushu Institute of Technology),Satoshi Matsumoto(Kyushu Institute of Technology),Masayuki Hikita(Kyushu Institute of Technology),Takehiko Mizuno(Fujikura Limited)\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eキーワード: \u003c\/strong\u003eSimulated XLPE\/EPR Interface|Partial Discharge Characteristics|Fourier Transfer Infrared Spectroscopy|Artificial defects|Degradation process|Absorbance peak ratio\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e要約(日本語): \u003c\/strong\u003eWe investigated the PD characteristics of simulated XLPE\/EPR cable interface the degradation mechanism utilizing FT-IR spectroscopy analysis.PD characteristics showed the significant variation by increasing the applied voltage Va, indicating that PD charge and PD pulse number increased for different kinds of defect, i.e. copper wire, needle-like void, and cotton fiber soaked with water.FT-IR Spectroscopy of degraded EPR specimens revealed that the IR absorption of C-H bond decrease, while C-O bond and C-H out-of-plane bending increased caused by degradation process at interface.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e原稿種別: \u003c\/strong\u003e日本語\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003ePDFファイルサイズ: \u003c\/strong\u003e2,064 Kバイト\u003c\/p\u003e","brand":"IEEJ-PDF","offers":[{"title":"PDFダウンロード（一般価格440円\/会員価格220円） \/ A4 \/ 2","offer_id":46396776481007,"sku":"IEEJ-ZT047142-PDF","price":440.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0718\/9512\/2159\/files\/IEEJ-PDF_5f78a64c-6d7b-41ab-870e-648c8d1b22aa.png?v=1744820172","url":"https:\/\/ieej.bookpark.ne.jp\/products\/ieej-zt047142","provider":"電気学会 電子図書館","version":"1.0","type":"link"}