Copper Contact Collaborating with SiC MOSFET and Drive Circuit Design for Hybrid DCCB in MVDC System

カテゴリ: 研究会(論文単位)

論文No: EPP22077,SA22044,SP22012

グループ名: 【A】基礎・材料・共通部門 放電・プラズマ・パルスパワー/【B】電力・エネルギー部門 静止器/【B】電力・エネルギー部門 開閉保護合同研究会

発行日: 2022/07/17

タイトル(英語): Copper Contact Collaborating with SiC MOSFET and Drive Circuit Design for Hybrid DCCB in MVDC System

著者名: Yuan Wenchao(Tokyo Institute of Technology),Zen Shungo(Tokyo Institute of Technology),Takeuchi Nozomi(Tokyo Institute of Technology),Ohnishi Wataru(The University of Tokyo),Inada Yuki(Saitama University)

著者名(英語): Wenchao Yuan(Tokyo Institute of Technology),Shungo Zen(Tokyo Institute of Technology),Nozomi Takeuchi(Tokyo Institute of Technology),Wataru Ohnishi(The University of Tokyo),Yuki Inada(Saitama University)

キーワード: MVDC|DC circuit breaker|copper contact|SiC MOSFET|drive circuit|photocoupler|MVDC|DC circuit breaker|copper contact|SiC MOSFET|drive circuit|photocoupler

要約(日本語): With the development of DC grids, DC interruption is in urgent demand. A new concept of hybrid DC circuit breaker consisting of fuse and IGBT has been raised, featuring high-speed current limiting and interrupting capability for low-voltage DC (LVDC) applications. Regarding the case of medium-voltage DC (MVDC) systems, SiC MOSFET with a higher rated voltage range is adopted. Consequently, the photocoupler becomes the vital component of the drive circuit for SiC MOSFET to offer insulation. Furthermore, the copper contact protects the SiC MOSFET from high voltage. Hence, the commutation path can be available for MVDC applications.

要約(英語): With the development of DC grids, DC interruption is in urgent demand. A new concept of hybrid DC circuit breaker consisting of fuse and IGBT has been raised, featuring high-speed current limiting and interrupting capability for low-voltage DC (LVDC) applications. Regarding the case of medium-voltage DC (MVDC) systems, SiC MOSFET with a higher rated voltage range is adopted. Consequently, the photocoupler becomes the vital component of the drive circuit for SiC MOSFET to offer insulation. Furthermore, the copper contact protects the SiC MOSFET from high voltage. Hence, the commutation path can be available for MVDC applications.

本誌: 2022年7月20日-2022年7月21日放電・プラズマ・パルスパワー/静止器/開閉保護合同研究会-1

本誌掲載ページ: 65-69 p

原稿種別: 英語

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