Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltages

カテゴリ: 研究会(論文単位)

論文No: EPP22111,SP22046,HV22092

グループ名: 【A】基礎・材料・共通部門 放電・プラズマ・パルスパワー/【B】電力・エネルギー部門 開閉保護/【B】電力・エネルギー部門 高電圧合同研究会

発行日: 2022/11/18

タイトル(英語): Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltages

著者名: Win Ko Tin Zar(University of Miyazaki),Torihara Ryo(Miyazaki Prefecture Industrial Technology Center),Sakoda Tatsuya(University of Miyazaki),Hayashi Noriyuki(University of Miyazaki)

著者名(英語): Tin Zar Win Ko(University of Miyazaki),Ryo Torihara (Miyazaki Prefecture Industrial Technology Center),Tatsuya Sakoda (University of Miyazaki),Noriyuki Hayashi (University of Miyazaki)

キーワード: Bypass Diode|Electrical Damage|Photovoltaic System|PN Junction Diode|Schottky Barrier Diode|Standard Lightning Impulse Voltage|Bypass Diode|Electrical Damage|Photovoltaic System|PN Junction Diode|Schottky Barrier Diode|Standard Lightning Impulse Voltage

要約(日本語): It is well known that lightning surge around a PV system is one of the major causes to become failure of bypass diodes (BPDs). The purpose of this study is to detect damage caused by lightning surge voltage induced between BPDs for the operation and maintenance of PV systems and BPDs. We conducted experimental works to investigate diode voltage (vD) and current (iD) characteristics of Schottky Barrier (SKB) diodes and rectifier diodes (PN Junction diodes) when standard lightning impulse voltage is exposed to them. It is demonstrated that the values of critical voltage (Vc) and resulting iD-vD characteristics depend remarkably on the polarity of applied voltages, electrical specifications of diodes, the types of diodes and the number of repeated voltage application.

要約(英語): It is well known that lightning surge around a PV system is one of the major causes to become failure of bypass diodes (BPDs). The purpose of this study is to detect damage caused by lightning surge voltage induced between BPDs for the operation and maintenance of PV systems and BPDs. We conducted experimental works to investigate diode voltage (vD) and current (iD) characteristics of Schottky Barrier (SKB) diodes and rectifier diodes (PN Junction diodes) when standard lightning impulse voltage is exposed to them. It is demonstrated that the values of critical voltage (Vc) and resulting iD-vD characteristics depend remarkably on the polarity of applied voltages, electrical specifications of diodes, the types of diodes and the number of repeated voltage application.

本誌: 2022年11月21日-2022年11月22日放電・プラズマ・パルスパワー/開閉保護/高電圧合同研究会-2

本誌掲載ページ: 5-10 p

原稿種別: 英語

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