Resistive Behavior of Schottky Barrier Diodes and Rectifier Diodes Damaged by Exposure to Standard Lightning Impulse Voltages

カテゴリ: 研究会(論文単位)

論文No: EPP22112,SP22047,HV22093

グループ名: 【A】基礎・材料・共通部門 放電・プラズマ・パルスパワー/【B】電力・エネルギー部門 開閉保護/【B】電力・エネルギー部門 高電圧合同研究会

発行日: 2022/11/18

タイトル(英語): Resistive Behavior of Schottky Barrier Diodes and Rectifier Diodes Damaged by Exposure to Standard Lightning Impulse Voltages

著者名: Linn Htet Swe Zin(University of Miyazaki),Torihara Ryo(Miyazaki Prefecture Industrial Technology Center),Sakoda Tatsuya(University of Miyazaki),Hayashi Noriyuki(University of Miyazaki)

著者名(英語): Swe Zin Linn Htet(University of Miyazaki),Ryo Torihara(Miyazaki Prefecture Industrial Technology Center),Tatsuya Sakoda(University of Miyazaki),Noriyuki Hayashi(University of Miyazaki)

キーワード: Bypass diode|Lightning surge|Photovoltaic system|Resistive behavior|Rectifier diode|Schottky barrier diode|Bypass diode|Lightning surge|Photovoltaic system|Resistive behavior|Rectifier diode|Schottky barrier diode

要約(日本語): In this paper, the authors report results of experimental works to exposure the impact of standard lightning impulse voltage (SLIV) applications to bypass diodes on their resistive behavior characteristics. In the experimental works, two kinds of diodes (Schottky Barrier Diodes and Rectifier diodes) were examined. The resistive behavior was evaluated, based on the slope of the static I-V characteristics of damaged diodes. It is found that the shape of the static I-V characteristics and the resistive behavior greatly depend on the magnitudes and polarities of SLIV, the types of bypass diodes, and the electrical specification of diodes. It is also found that multiple application of SLIV accelerates the resistive behaviors.

要約(英語): In this paper, the authors report results of experimental works to exposure the impact of standard lightning impulse voltage (SLIV) applications to bypass diodes on their resistive behavior characteristics. In the experimental works, two kinds of diodes (Schottky Barrier Diodes and Rectifier diodes) were examined. The resistive behavior was evaluated, based on the slope of the static I-V characteristics of damaged diodes. It is found that the shape of the static I-V characteristics and the resistive behavior greatly depend on the magnitudes and polarities of SLIV, the types of bypass diodes, and the electrical specification of diodes. It is also found that multiple application of SLIV accelerates the resistive behaviors.

本誌: 2022年11月21日-2022年11月22日放電・プラズマ・パルスパワー/開閉保護/高電圧合同研究会-2

本誌掲載ページ: 11-16 p

原稿種別: 英語

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