Mid-infrared detection using Si-technology compatible plasmon enhanced Schottky structure

カテゴリ: 研究会(論文単位)

論文No: MSS25001

グループ名: 【E】センサ・マイクロマシン部門 マイクロマシン・センサシステム研究会

発行日: 2025/01/28

タイトル(英語): Mid-infrared detection using Si-technology compatible plasmon enhanced Schottky structure

著者名: Elyas Ashenafi(The University of Electro-communications),Tetsuo Kan(The University of Electro-communications)

著者名(英語): Ashenafi Elyas(The University of Electro-communications),Kan Tetsuo(The University of Electro-communications)

キーワード: Mid-infrared|Schottky|Sensors|Photodetector|Si-technology|Mid-infrared|Schottky|Sensors|Photodetector|Si-technology

要約(日本語): Mid-infrared detectors are crucial in different sensing applications, such as gas and chemical spectroscopy. However, conventional mid-IR detectors, typically based on low band gap compound semiconductors, are based on complex fabrication processes, are u

要約(英語): Mid-infrared detectors are crucial in different sensing applications, such as gas and chemical spectroscopy. However, conventional mid-IR detectors, typically based on low band gap compound semiconductors, are based on complex fabrication processes, are unstable, and contain toxic elements. We, therefore, proposed a PtSi/p-Si-based mid-IR Schottky detector fabricated using a Si-technology compatible process. Usually, silicon detectors can only detect wavelengths up to 1.1 μm, but by introducing a platinum silicide (PtSi) film, the barrier height is lowered to 0.32 eV, enabling mid-IR light detection up to 4.0 μm. The plasmonic structures are applied to enhance light absorption through surface plasmon resonance. Furthermore, this structure allows tuning the absorption wavelength across the interest wavelength. We experimentally confirmed that the developed detector is responsive to mid-IR light, and its sensitivity was enhanced at room temperature.

本誌: 2025年1月31日マイクロマシン・センサシステム研究会

本誌掲載ページ: 1-4 p

原稿種別: 英語

PDFファイルサイズ: 1,186 Kバイト