InSb及びInAsSb薄膜のGaAs（001）上へのMBE成長と格子ミスマッチの低減効果

カテゴリ: 部門大会

論文No: 30pm1-B-1

グループ名: 第32回「センサ・マイクロマシンとその応用システム」シンポジウム論文集

発行日: 2015/10/21

タイトル(英語): The effect of large lattice mismatch on InSb single crystal thin films and InAsSb thin films grown on GaAs substrates by MBE

著者名: 柴崎 一郎*{1}，外賀 寛孝{2}，岡本 敦{2}({1}豊橋技術科学大学，{2}旭化成エレクトロニクス)

キーワード: InSb薄膜,格子不整合,MBE成長,電子輸送現象,磁気センサ

要約(英語): A relation between transport properties of InSb single crystal thin films grown on GaAs substrates by MBE and a large lattice mismatch between InSb and GaAs was studied. Several large mismatch effects were found. By reducing such lattice mismatch effect, InSb thin films with large electron mobility could be grown. A buffer layer on GaAs surface and Sn doping as n-type impurity was effective to reduce mismatch effects.

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