CMOSイメージセンサ技術とＭＥＭＳファブリペロー干渉計を融合した非標識バイオセンサ

カテゴリ: 部門大会

論文No: 7PM1-A-1

グループ名: 【E】平成25年電気学会センサ・マイクロマシン部門大会講演論文集

発行日: 2013/10/29

タイトル(英語): Heterogeneous integration of CMOS image sensor and MEMS Fabry-Perot interferometer for label-free biosensing

著者名: 高橋 一浩 (豊橋技術科学大学),小澤 遼 (豊橋技術科学大学),大山 泰生 (豊橋技術科学大学),二川 雅登 (豊橋技術科学大学),太齋 文博 (豊橋技術科学大学),石田 誠 (豊橋技術科学大学),澤田 和明 (豊橋技術科学大学)

キーワード: MEMS|ファブリペロー干渉計|表面応力|CMOSイメージセンサ|非標識バイオセンサ

要約(日本語): We have developed a CMOS-MEMS-based label-free protein sensor, which utilizes optical transmittance change by the Fabry-Perot interference to enhance the sensitivity of surface stress. Theoretical minimum detectable surface stress of the proposed sensor is predicted -1 ・N/m which is two orders of magnitude above the peizoresistive type. A read-out tiny photocurrent from the multidimensional arrayed MEMS sensor is signal-processed by integrated source follower circuit, selector, and decoder. We successfully demonstrated the MOSFET and MEMS sensor, and established the heterogeneous integration process. The released polychloro-para-xylylene membrane is 280-nm thick and has a diameter of 200 ｣gm with a 290-nm air gap, which confirmed a low aspect ratio of 1.4 ．ﾑ 10-3 above the nano-cavity. The linearity of the integrated source follower circuit was obtained.

要約(英語): We have developed a CMOS-MEMS-based label-free protein sensor, which utilizes optical transmittance change by the Fabry-Perot interference to enhance the sensitivity of surface stress. Theoretical minimum detectable surface stress of the proposed sensor is predicted -1 ・N/m which is two orders of magnitude above the peizoresistive type. A read-out tiny photocurrent from the multidimensional arrayed MEMS sensor is signal-processed by integrated source follower circuit, selector, and decoder. We successfully demonstrated the MOSFET and MEMS sensor, and established the heterogeneous integration process. The released polychloro-para-xylylene membrane is 280-nm thick and has a diameter of 200 ｣gm with a 290-nm air gap, which confirmed a low aspect ratio of 1.4 ｡ﾑ 10-3 above the nano-cavity. The linearity of the integrated source follower circuit was obtained.

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