The crystal structure of copper oxides prepared under various conditions by dc reactive magnetron sputtering

カテゴリ: 部門大会

論文No: 3-P-22

グループ名: 【A】令和元年電気学会基礎・材料・共通部門大会講演論文集

発行日: 2019/08/16

著者名: Anmar Shukor(Kogakuin University),Ali Haider(Kufa University),Takano Ichiro(Kogakuin University)

キーワード: Cu2O and CuO thin film|Crystal structure of Cu2O|DC reactive magnetron sputtering methode|Optical properties

要約(日本語): A cuprous oxide (Cu₂O) film is a p-type semiconductor having a direct band gap of 2.1 eV and a cubic crystal structure, whereas cupric oxide (CuO) is a monoclinic n-type semiconductor with a band gap of 1.2-1.5 eV. DC reactive magnetron sputtering is one of the most practical thin film deposition methods because of the advantage of a high deposition rate, uniformity on a large area substrate. In this study, crystal structure of copper oxide thin films have investigated under various conditions.

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