Thermal profile on IC employing PTAT voltage generator consisting of two MOSFETs

カテゴリ：国際会議

論文No：C3

グループ名：【C】AVIC2025

発行日：2025/10/20

著者名：Keita Hasegawa (Meiji University), Michitaka Yoshino (Meiji University), Kawori Sekine (Meiji University), Kazuyuki Wada (Meiji University)

キーワード：PTAT voltage generator circuit,Vptat,Temperature,Power consumption,Distance

要約(英語)：The temperature distribution on an integrated circuit (IC) chip was evaluated using a PTAT (Proportional To Absolute Temperature) voltage generation circuit. First, by controlling the ambient temperature and measuring the output voltage (Vptat) of the PTAT circuit, we derived a relationship between temperature and Vptat, successfully detecting the temperature dependence of Vptat. Next, by operating a transistor as a localized heat source, we confirmed that the temperature on the IC chip increased proportionally to the amount of heat generated, and that the response time varied depending on the distance from the heat source. These results demonstrate that the PTAT voltage generation circuit can detect temperature distributions on the IC chip based on heating conditions and spatial relationships.

本誌掲載ページ：53-56p

原稿種別：英語

PDFファイルサイズ：655Kバイト