Design and measurement of voltage reference circuit by an equivalent MOSFET having different temperature coefficient of threshold voltage

カテゴリ：国際会議

論文No：C4

グループ名：【C】AVIC2025

発行日：2025/10/20

著者名：Shuya Isawa (Meiji University), Michitaka Yoshino (Meiji University), Kawori Sekine (Meiji University), Kazuyuki Wada (Meiji University), Francois Rivet (Universite de Bordeaux), Herve Lapuyade (Universite de Bordeaux), Yann Deval (Universite de Bordeaux)

キーワード：Voltage reference circuit,PTAT,Level shift

要約(英語)：This paper investigates a voltage reference circuit that incorporates an equivalent MOSFET, which adjusts the hreshold voltage and its temperature coefficient using a Proportional To Absolute Temperature (PTAT) voltage generation circuit by measurement. The circuit was designed, fabricated, and measured using the TSMC 180 nm CMOS process. The temperature coefficient of the reference voltage Vref achieved was 480 ppm/K, and it was confirmed that the circuit operates in the temperature range of 290 K to 370 K.

本誌掲載ページ：57-60p

原稿種別：英語

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