Applying gate–source voltage enhancement and threshold voltage reduction techniques to ultralow voltage charge-pump circuit

カテゴリ：国際会議

論文No：C5

グループ名：【C】AVIC2025

発行日：2025/10/20

著者名：Arisa Shimizu (Tokyo University of Science), Ryoichi Miyauchi (Tokyo University of Science), Akira Hyogo (Tokyo University of Science)

キーワード：RF energy harvesting,Charge pump,Start-up response time,Extremely low voltage input,Body bias effect

要約(英語)：This paper describes the improvement of the startup response time in an ultra-low voltage input charge-pump boost converter. In RF Energy Harvesting (RFEH), the harvested voltage becomes significantly low when the RF source is far from the receiver or when losses in the rectifier are substantial. Therefore, a charge-pump boost converter is essential to generate a sufficient voltage to operate the subsequent system. Although previous works have proposed individual circuits that apply either gate–source voltage enhancement or threshold voltage reduction, no prior study has combined both techniques in a single design. When combining these techniques, the internal node voltages in the circuit differ significantly from those in conventional designs, requiring careful investigation of optimal connection points. This paper proposes a novel circuit that integrates both techniques to achieve improved performance under ultra-low voltage conditions. Simulation results confirm that the proposed circuit achieves an improvement in start-up response time.

本誌掲載ページ：61-64p

原稿種別：英語

PDFファイルサイズ：915Kバイト