Improved Permittivity Variation to Reduce Electric Field Stress at Triple Junctions of High-Voltage Power Module

カテゴリ: 部門大会

論文No: 3-B-a2-2

グループ名: 【A】令和６年電気学会基礎・材料・共通部門大会

発行日: 2024/08/26

タイトル(英語): Improved Permittivity Variation to Reduce Electric Field Stress at Triple Junctions of High-Voltage Power Module

著者名: Nwizu Obianuju(Nagoya University), Kazuma Tagawa(Nagoya University), Kurimoto Muneaki(Nagoya University)

キーワード: High Voltage Power module|Electric Field Control|Relative Permittivity|Finite Element Analysis

要約(日本語): WBG semiconductors has capabilities in high-voltage power electronics devices because of their high withstand voltage and temperature tolerance. For its optimum use, several high-voltage power modules are being designed to operate these devices efficiently, but reliability remains an issue. This paper proposes a new power module design to reduce the electric field intensity at multiple triple junctions and maintain a high-power density. The electric field stress inside the proposed design was simulated on COMSOL Multiphysics software.

要約(英語): WBG semiconductors has capabilities in high-voltage power electronics devices because of their high withstand voltage and temperature tolerance. For its optimum use, several high-voltage power modules are being designed to operate these devices efficiently, but reliability remains an issue. This paper proposes a new power module design to reduce the electric field intensity at multiple triple junctions and maintain a high-power density. The electric field stress inside the proposed design was simulated on COMSOL Multiphysics software.

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