Mg-Al 複水酸化物薄膜のドロップ蒸発堆積

カテゴリ：部門大会

論文No：3-A-a1-5

グループ名：【A】令和７年電気学会基礎・材料・共通部門大会

発行日：2025/8/27

タイトル(英語)：

著者名：市村 正也(名古屋工業大学)，大倉 航貴(名古屋工業大学)

著者名(英語)：

キーワード：複水酸化物,化学溶液堆積,透明半導体

要約(日本語)：We attempt to use hydroxides as a novel transparent conductive material. So far, most of hydroxides have been regarded as an insulator and have seldom been utilized for electronics. We deposit the Mg-Al double hydroxide films by the drop-dry deposition, DDD. The apparatus needed is a hot plate only, and thus DDD is a very simple and low-cost technique for thin film deposition. Pure Mg(OH)2 has resistivity of the order of 109 ohmcm and thus is almost insulating. On the other hand, resisivity decreases with increase in Al content x of Mg1-xAlx-OH. For x > 0.75, resitivity is of the order of 104 ohmcm. The results show that the Mg-Al double hydroxides can be semiconducting and thus be used for transparent electronics applications

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