商品情報にスキップ
1 1

Fabrication of Micro-Thermoelectric Cooler Based on Electrochemical Deposition

Fabrication of Micro-Thermoelectric Cooler Based on Electrochemical Deposition

通常価格 ¥330 JPY
通常価格 セール価格 ¥330 JPY
セール 売り切れ
税込

カテゴリ: 研究会(論文単位)

論文No: CHS18003

グループ名: 【E】センサ・マイクロマシン部門 ケミカルセンサ研究会

発行日: 2018/07/12

タイトル(英語): Fabrication of Micro-Thermoelectric Cooler Based on Electrochemical Deposition

著者名: Enju Jirath(Graduate School of Engineering Tohoku University),Nguyen Huu Trung(Graduate School of Engineering Tohoku University),Bin Samat Khairul Fadzli(Graduate School of Engineering Tohoku University),Ono Takahito(Graduate School of Engineering Tohoku University)

著者名(英語): Jirath Enju(Graduate School of Engineering Tohoku University),Huu Trung Nguyen(Graduate School of Engineering Tohoku University),Khairul Fadzli Bin Samat(Graduate School of Engineering Tohoku University),Takahito Ono(Graduate School of Engineering Tohoku University)

キーワード: Thermoelectric Materials|Fabrication|Simulation|Electrochemical deposition|Micro-cooler|Thermoelectric Materials|Fabrication|Simulation|Electrochemical deposition|Micro-cooler

要約(日本語): The design, fabrication, and simulation of micro-thermoelectric coolers (μ-TECs) using thermoelectric materials n-type Bismuth Telluride (Bi2Te3), p-type Antimony Telluride (Sb2Te3), and Platinum Bismuth Telluride (Pt/Bi2Te3) composite are introduced. The thermoelectric films are grown by using potentiostatic electrochemical deposition due to its good thermoelectric properties, cost-effective advantages, ability to deposit thick films, and compatibility to micro fabrication process. Two types of specific designs are considered and simulated to calculate the factors that determine the performance of the device. The maximum temperature difference generated from the thermoelectric materials, conduction coefficient, optimum current, and Coefficient of Performance (COP) are evaluated.

要約(英語): The design, fabrication, and simulation of micro-thermoelectric coolers (μ-TECs) using thermoelectric materials n-type Bismuth Telluride (Bi2Te3), p-type Antimony Telluride (Sb2Te3), and Platinum Bismuth Telluride (Pt/Bi2Te3) composite are introduced. The thermoelectric films are grown by using potentiostatic electrochemical deposition due to its good thermoelectric properties, cost-effective advantages, ability to deposit thick films, and compatibility to micro fabrication process. Two types of specific designs are considered and simulated to calculate the factors that determine the performance of the device. The maximum temperature difference generated from the thermoelectric materials, conduction coefficient, optimum current, and Coefficient of Performance (COP) are evaluated.

原稿種別: 英語

PDFファイルサイズ: 1,762 Kバイト

販売タイプ
書籍サイズ
ページ数
詳細を表示する