20nm世代以細対応FinFETにおける特性バラツキ問題

カテゴリ: 部門大会

論文No: TC9-4

グループ名: 【C】平成24年電気学会電子・情報・システム部門大会講演論文集

発行日: 2012/09/05

タイトル(英語): Comprehensive Analysis of Characteristic Variation in FinFETs for 20nm and Beyond

著者名: 昌原明植 (産業技術総合研究所)

著者名(英語): Meishoku Masahara(AIST)

キーワード: フィンFET|しきい値電圧|特性バラツキ|オン電流|FinFET|Threshold Voltage|Characteristic Variation|On-Current

要約(日本語): On-current (Ion) variation in metal gate FinFETs is comprehensively investigated with regard to the contributions of threshold voltage (Vt), parasitic resistance (Rpara) and trans-conductance (Gm) variations, which are successfully extracted as the independent variation sources. It is experimentally confirmed that the Gm variation of the FinFETs exhibits a linear relationship in Pelgrom plot as well as the Vt variation, and is not reduced with scaling the gate dielectric thickness unlike the Vt variation. Perspective for beyond 20nm represents that the Gm variation will be the dominant Ion variation source. A solution to reduce the Gm variation for the FinFET is also proposed.

PDFファイルサイズ: 3,405 Kバイト