Deposition of Cu in Ru-lined Deep Nanotrenches using a New Cu(I) Amidinate Precursor

カテゴリ: 部門大会

論文No: OS8-5

グループ名: 【C】平成26年電気学会電子・情報・システム部門大会講演論文集

発行日: 2014/09/03

タイトル(英語): Deposition of Cu in Ru-lined Deep Nanotrenches using a New Cu(I) Amidinate Precursor

著者名: Md. Rasadujjaman (山梨大学),渡邉 満洋(山梨大学),須藤 弘(気相成長),町田 英明(気相成長),近藤英一 (山梨大学)

著者名(英語): Md. Rasadujjaman(University of Yamanashi),Mitsuhiro Watanabe(University of Yamanashi),Hiroshi Sudo(Gas-phase growth Inc.),Hideaki Machida(Gas-phase growth Inc.),Eiichi Kondoh(University of Yamanashi)

キーワード: 銅CVD|有機金属錯体|超臨界流体超臨界流体|Cu CVD|organometal chelate|supercritical fluids

要約(日本語): Supercritical fluid chemical deposition (SFCD) technique is highly effective for filling high-aspect ratio features [1]. This method has already been utilized using several organic Cu-precursor like Cu(hfac)2, Cu(dibm)2 for deposition. Both of these precursors have low reactivity, which requires high decomposition temperature. Decomposition of the precursors leads to the incorporate ion of carbon and oxygen impurities, which degraded the quality of the films. We report the SFCD deposition of Cu-films using a new Cu precursor diisopropylpropion-amidinate copper(I) dimer, [Cu(DIPPA)]2. The new Cu-precursor were found to be reactive at lower temperatures (e.g. 140?C).

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