Design consideration of a thin-film SOI power MOSFET for high temperature applications

カテゴリ: 部門大会

論文No: SS2-1

グループ名: 【C】平成27年電気学会電子・情報・システム部門大会講演論文集

発行日: 2015/08/27

タイトル(英語): Design consideration of a thin-film SOI power MOSFET for high temperature applications

著者名: Daiki Takenaka(Kyushu Institute of Technology),Tomoya Takasugi(Kyushu Institute of Technology),Wataru Yoshida(Kyushu Institute of Technology),Satoshi Matsumoto(Kyushu Institute of Technology)

著者名(英語): Daiki Takenaka(Kyusyu Institute of Technology),Tomoya Takasugi(Kyusyu Institute of Technology),Wataru Yoshida(Kyusyu Institute of Technology),Satoshi Matsumoto(Kyusyu Institute of Technology)

キーワード: SOI構造|高温|パワーIC|ホットキャリア効果|SOI|high temperature|power IC|hot carrier effect

要約(日本語): Recently, a thin-film SOI power MOSFET has been attracted because it is one of the promising candidates for power devices, which can operate high temperature. It can suppress leakage current caused by high temperature and avoid latch-up caused by leakage current. In this study, we evaluate DC characteristics, hot carrier effect, positive bias temperature instability at high temperature and reveal the following;
(1) On-resistance increases with increasing temperature.
(2) Leakage current increases with increasing temperature.
(3) Device degradation caused by hot carrier effect decreases with increasing temperature.
(4) Device degradation caused by positive bias temperature instability increases with increasing temperature.

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