Numerical evaluations of a silicon on diamond structure for 3D-power supply on chip

カテゴリ: 部門大会

論文No: SS2-2

グループ名: 【C】平成27年電気学会電子・情報・システム部門大会講演論文集

発行日: 2015/08/27

タイトル(英語): Numerical evaluations of a silicon on diamond structure for 3D-power supply on chip

著者名: Wataru Yoshida(Kyushu Institute of Technology),Kentaro Nakagawa(Kyushu Institute of Technology),Satoshi Matsumoto(Kyushu Institute of Technology),Masataka Hasegawa(The National Institute of Advanced Industrial Science and Technology)

著者名(英語): Wataru Yoshida(Kyushu Institute of Technology),Kentaro Nakagawa(Kyushu Institute of Technology),Satoshi Matsumoto(Kyushu Institute of Technology),Masataka Hasegawa(The National Institute of Advanced Industrial Science and Technology)

キーワード: パワーSoC|SOI|3D-IC3D-IC|power SoC|Silicon on Insulator|3D-IC

要約(日本語): Recently, 3D stacked power supply on chip (SoC) has been attracted attention because it can realize ultimate minimization of the power supply. The SOI technology is one of the promising technologies to realize power SoC. However, SOI technology has a problem of self-heating effect because of poor thermal conductivity of SiO₂. For the 3D stacked power SoC, it is important to exhaust heat. So we propose a new 3D stacking structure which has thin diamond film to exhaust heat. In this study, we perform thermal analysis to new 3D stacking structure using numerical simulations.

In conclusion…
Thin diamond layer and TSV can realize exhausting heat
The temperature of heating layer is affected by the position of heating layer.
⇒　Lower side is more effective to exhaust heat.

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