Study of Influence of Magnetic Flux on Semiconductor Switches in High-Power-Density Isolated DC-DC Converter

カテゴリ: 部門大会

論文No: SS2-5

グループ名: 【C】平成27年電気学会電子・情報・システム部門大会講演論文集

発行日: 2015/08/27

タイトル(英語): Study of Influence of Magnetic Flux on Semiconductor Switches in High-Power-Density Isolated DC-DC Converter

著者名: Tomoya Koga(Nagasaki University),Akinori Hariya(Nagasaki University),Yudai Mizoguchi(Nagasaki University),Yoichi Ishizuka(Nagasaki University),Ken Matsuura(TDK Corporation),Hiroshige Yanagi(TDK-Lambda Corporation),Satoshi Tomioka(TDK-Lambda Corporation),Tamotsu Ninomiya(Asian Growth Research Institute)

著者名(英語): Tomoya Koga(Nagasaki University),Akinori Hariya(Nagasaki University),Yudai Mizoguchi(Nagasaki University),Yoichi Ishizuka(Nagasaki University),Ken Matsuura(TDK Corporation),Hiroshige Yanagi(TDK-Lambda Corporation),Satoshi Tomioka(TDK-Lambda Corporation),Tamotsu Ninomiya(Asian Growth Research Institute)

キーワード: High-Power Density|GaN-HEMT|Isolated DC-DC Converter|MHz Level Frequency|Magnetic Transformer

要約(日本語): In the structure of high-power-density isolated dc-dc converter, the components are placed close to each other. Therefore, the mutual effects of the components are needed to take into account. Also, lateral-structure semiconductor switches are widely used to reduce power losses of switching in the MHz level. However they are affected by the magnetic flux. In this paper, the influence of magnetic flux on the semiconductor switches has been revealed. As a measure of the problem, the using a magnetic shield has been proposed, and the effects have been confirmed. The electromagnetic field simulation with Maxwell 3D and some experiments have been done with the prototype 5MHz and 32W/cc unregulated LLC resonant dc-dc converter using GaN-HEMTs.

PDFファイルサイズ: 333 Kバイト