Carrier behavior in highly-oriented organic semiconductor films

カテゴリ: 研究会(論文単位)

論文No: DEI16017

グループ名: 【A】基礎・材料・共通部門 誘電・絶縁材料研究会

発行日: 2016/01/11

タイトル(英語): Carrier behavior in highly-oriented organic semiconductor films

著者名: Manaka Takaaki(Tokyo Institute of Technology),Iwamoto Mitsumasa(Tokyo Institute of Technology)

著者名(英語): Takaaki Manaka(Tokyo Institute of Technology),Mitsumasa Iwamoto(Tokyo Institute of Technology)

キーワード: Organic FET|mobility|optical second harmonic generation|Organic FET|mobility|optical second harmonic generation

要約(日本語): Carrier transport phenomena are fundamental subjects in organic semiconductor physics, and are also important for the practical applications. In this study, we propose a novel method to observe the anisotropic carrier transport by using the time-resolved microscopic second harmonic generation (TRM-SHG) imaging. We used the FET structure with round-shaped source electrode. Since the round-shaped electrode can inject carriers uniformly in all directions, angular dependence of the carrier velocity (carrier mobility) is directly visualized at once. According to the TRM-SHG measurement, carrier spread from the electrode, and the shape of the SHG distribution was not a perfect circle, indicating that the carrier velocity strongly depended on the flowing direction. In other words, the ellipse-shaped SHG image directly represents the anisotropic carrier velocity. Analyzing the SHG image, mobility anisotropy was estimated at approximately 4. Microscopic transport mechanism is also discussed on the basis of the temperature dependence of the mobility. Thus, the TRM-SHG measurement becomes a powerful tool to investigate the anisotropic nature of transient carrier transport in the practical devices.

要約(英語): Carrier transport phenomena are fundamental subjects in organic semiconductor physics, and are also important for the practical applications. In this study, we propose a novel method to observe the anisotropic carrier transport by using the time-resolved microscopic second harmonic generation (TRM-SHG) imaging. We used the FET structure with round-shaped source electrode. Since the round-shaped electrode can inject carriers uniformly in all directions, angular dependence of the carrier velocity (carrier mobility) is directly visualized at once. According to the TRM-SHG measurement, carrier spread from the electrode, and the shape of the SHG distribution was not a perfect circle, indicating that the carrier velocity strongly depended on the flowing direction. In other words, the ellipse-shaped SHG image directly represents the anisotropic carrier velocity. Analyzing the SHG image, mobility anisotropy was estimated at approximately 4. Microscopic transport mechanism is also discussed on the basis of the temperature dependence of the mobility. Thus, the TRM-SHG measurement becomes a powerful tool to investigate the anisotropic nature of transient carrier transport in the practical devices.

原稿種別: 英語

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