Electrostatic phenomena at Donor-Acceptor interface of organic semiconductors studied by the in-situ optical second-harmonic generation measurement

カテゴリ: 研究会(論文単位)

論文No: DEI18021

グループ名: 【A】基礎・材料・共通部門 誘電・絶縁材料研究会

発行日: 2018/01/23

タイトル(英語): Electrostatic phenomena at Donor-Acceptor interface of organic semiconductors studied by the in-situ optical second-harmonic generation measurement

著者名: Manaka Takaaki(Tokyo Institute of Technology),Iwamoto Mitsumasa(Tokyo Institute of Technology)

著者名(英語): Takaaki Manaka(Tokyo Institute of Technology),Mitsumasa Iwamoto(Tokyo Institute of Technology)

キーワード: donor-acceptor interface|SHG|Organic solar cells|donor-acceptor interface|SHG|Organic solar cells

要約(日本語): Optical second-harmonic generation (SHG) measurement was conducted to study the electrostatic phenomena at donor-acceptor interface of organic semiconductors. SHG signal was monitored in-situ during successive deposition of fullerene and pentacene layer. SHG intensity monotonously increased during the fullerene deposition and drastically decreased immediately after pentacene deposition started. This decrease is attributed to the formation of dipole layer at the interface between fullerene and pentacene. Theoretical simulation of the thickness dependence of the SHG intensity also supports the presence of the dipole layer. In-situ observation also indicates that insertion of insulating layer between donor and acceptor layer inhibits the dipole layer formation.

要約(英語): Optical second-harmonic generation (SHG) measurement was conducted to study the electrostatic phenomena at donor-acceptor interface of organic semiconductors. SHG signal was monitored in-situ during successive deposition of fullerene and pentacene layer. SHG intensity monotonously increased during the fullerene deposition and drastically decreased immediately after pentacene deposition started. This decrease is attributed to the formation of dipole layer at the interface between fullerene and pentacene. Theoretical simulation of the thickness dependence of the SHG intensity also supports the presence of the dipole layer. In-situ observation also indicates that insertion of insulating layer between donor and acceptor layer inhibits the dipole layer formation.

原稿種別: 英語

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