Performance comparison between SiC- and Si-MOSFETs

カテゴリ: 研究会(論文単位)

論文No: ED16213

グループ名: 【A】基礎・材料・共通部門 放電研究会

発行日: 2016/10/22

タイトル(英語): Performance comparison between SiC- and Si-MOSFETs

著者名: Feng Yu(長岡技術科学大学),余 亮(長岡技術科学大学),須貝 太一(長岡技術科学大学),江 偉華(長岡技術科学大学)

著者名(英語): Yu Feng(Nagaokaut University of Technology),Liang Yu(Nagaokaut University of Technology),Taichi Sugai(Nagaokaut University of Technology),Weihua Jiang(Nagaokaut University of Technology)

キーワード: パルスパワー|ＳＩＣ－ＭＯＳＦＥＴ|Pulsed power|SIC-MOSFET

要約(日本語): Silicon carbide (SiC) power devices are expected to have wide applications to pulsed power technologies because of their superior characteristics compared with traditional silicon (Si) based devices. In order to take full advantage of SiC devices, it is necessary to understand their characteristics and to optimize their driving circuits for pulsed power purposes. This paper reports some initial results of experimental investigation on performance comparison between SiC and Si based power MOSFETs.

要約(英語): Silicon carbide (SiC) power devices are expected to have wide applications to pulsed power technologies because of their superior characteristics compared with traditional silicon (Si) based devices. In order to take full advantage of SiC devices, it is necessary to understand their characteristics and to optimize their driving circuits for pulsed power purposes. This paper reports some initial results of experimental investigation on performance comparison between SiC and Si based power MOSFETs.

原稿種別: 英語

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