パルス放電CVD法によってPMMA基板上に生成されたアモルファスカーボン膜の特性

カテゴリ: 研究会(論文単位)

論文No: PPT11085

グループ名: 【A】基礎・材料・共通部門 パルスパワー研究会

発行日: 2011/12/15

タイトル(英語): The characteristics of the amorphous carbon film deposited on PMMA substrate by pulsed discharge chemical vapor deposition method

著者名: Sung Ta-Lun (Lunghwa University of Science and Technology,Taiwan),Liu Chung-Ming (Lunghwa University of Science and Technology,Taiwan),Teii Shinriki(Lunghwa University of Science and Technology,Taiwan),Lin Li-Deh (School of Dentistry,National Taiwan University,Taiwan ),Tseng Wan-Yu (School of Dentistry,National Taiwan University,Taiwan )

著者名(英語): Sung Ta-Lun(Lunghwa University of Science and Technology,Taiwan),Liu Chung-Ming(Lunghwa University of Science and Technology,Taiwan),Teii Shinriki(Lunghwa University of Science and Technology,Taiwan),Lin Li-Deh(School of Dentistry,National Taiwan University,Taiwan ),Tseng Wan-Yu(School of Dentistry,National Taiwan University,Taiwan )

キーワード: ａｍｏｒｐｈｏｕｓ　ｃａｒｂｏｎ|ｐｕｌｓｅｄ　ｄｉｓｃｈａｒｇｅ|ＰＭＭＡ|Ｒａｍａｎ|ｍｉｃｒｏ　ｈａｒｄｎｅｓｓ|amorphous carbon|pulsed discharge|PMMA|Raman|micro hardness

要約(日本語): Amorphous carbon films have been deposited on PMMA substrates by using pulsed discharge chemical deposition method. The films deposited on PMMA are similar to those deposited on silicon substrate by Raman spectrum analyzation. However, the micro hardness of the films on substrates is low and around 40 Hv. Compared to those deposited on silicon substrates, 1880 Hv could be reached at 110 s period pulsed voltages and 68 mtorr pressure.

要約(英語): Amorphous carbon films have been deposited on PMMA substrates by using pulsed discharge chemical deposition method. The films deposited on PMMA are similar to those deposited on silicon substrate by Raman spectrum analyzation. However, the micro hardness of the films on substrates is low and around 40 Hv. Compared to those deposited on silicon substrates, 1880 Hv could be reached at 110 s period pulsed voltages and 68 mtorr pressure.

原稿種別: 日本語

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