Silicon Carbide Super-GTO Development and Evaluation

カテゴリ: 研究会(論文単位)

論文No: PST10027

グループ名: 【A】基礎・材料・共通部門 プラズマ研究会

発行日: 2010/08/05

タイトル(英語): Silicon Carbide Super-GTO Development and Evaluation

著者名: Heather O'Brien(U.S. Army Research Laboratory),Aderinto Ogunniyi(U.S. Army Research Laboratory),Charles J. Scozzie (U.S. Army Research Laboratory),William Shaheen(Berkeley Research Associates),Q. Jon Zhang (Cree,Inc.),Anant K. Agarwal (Cree,Inc.),Victor Temple(Silicon Power Corp.)

著者名(英語): Heather O'Brien(U.S. Army Research Laboratory),Aderinto Ogunniyi(U.S. Army Research Laboratory),Charles J. Scozzie (U.S. Army Research Laboratory),William Shaheen(Berkeley Research Associates),Q. Jon Zhang (Cree,Inc.),Anant K. Agarwal (Cree,Inc.),Victor Temple(Silicon Power Corp.)

要約(日本語): The U.S. Army Research Laboratory has been conducting research on silicon carbide power devices in support of pulsed power Army applications. Such applications require light-weight, power-dense switches suitable for mobile platforms. While silicon-based semiconductor switches are suitable for near-term demonstrations, focus is on silicon carbide switches for future ground combat vehicles. Silicon carbide’s high breakdown field enables thinner high-voltage devices, while its shorter minority carrier lifetime allows for faster turn-off. The material’s thermal conductivity and high Young’s modulus make it ideal for high-power pulsed switching applications [1, 2].

要約(英語): The U.S. Army Research Laboratory has been conducting research on silicon carbide power devices in support of pulsed power Army applications. Such applications require light-weight, power-dense switches suitable for mobile platforms. While silicon-based semiconductor switches are suitable for near-term demonstrations, focus is on silicon carbide switches for future ground combat vehicles. Silicon carbide’s high breakdown field enables thinner high-voltage devices, while its shorter minority carrier lifetime allows for faster turn-off. The material’s thermal conductivity and high Young’s modulus make it ideal for high-power pulsed switching applications [1, 2].

原稿種別: 日本語

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