パルス駆動大気圧マイクロプラズマによる化合物半導体GaN表面改質の基礎研究

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2012/03/01

タイトル(英語): Basic Study on Surface Treatment of GaN by Pulsed Atmospheric Microplasma

著者名: 清水　一男（静岡大学 イノベーション共同研究センター），野間　悠太（静岡大学 イノベーション共同研究センター），Marius Blajan（静岡大学 イノベーション共同研究センター），成塚　重弥（名城大学 理工学部 材料機能工学科）

著者名(英語): Kazuo Shimizu (Innovation and Joint Research Center, Shizuoka University), Yuta Noma (Innovation and Joint Research Center, Shizuoka University), Marius Blajan (Innovation and Joint Research Center, Shizuoka University), Shigeya Naritsuka (Department of Materials Science and Engineering, Meijo University)

キーワード: 大気圧マイクロプラズマ，表面改質，化合物半導体，GaN　　atmospheric microplasma，surface treatment，compound semiconductor，GaN

要約(英語): Surface treatment of GaN by pulsed atmospheric microplasma was experimentally investigated. Microplasma was generated with a pair of electrodes which covered with dielectric layer, at relatively low discharge voltage of around 1 kV, and advantage of reducing the power and downsizing the entire plasma system. Electrodes were faced each other with a spacer (thickness 100 um) in between. Streamers were generated between the electrodes, which generate various radicals and ions that could affect a target surface. Contact angles and an analysis by X-ray Photoelectron Spectroscopy (XPS) were measured before and after microplasma to refer GaN surface. Discharge voltage was -1.3 kV, frequency was 24 kHz, treatment time was 10s.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.132 No.3 （2012） 特集：平成23 年基礎・材料・共通部門大会

本誌掲載ページ: 270-271 p

原稿種別: 研究開発レター／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/132/3/132_3_270/_article/-char/ja/