RFプラズマCVD法によるSiCN薄膜堆積の低温化に関する研究

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2014/10/01

タイトル(英語): Low-temperature Deposition of SiCN Thin Films by RF Plasma CVD Method

著者名: 熊懐　正彦（室蘭工業大学大学院 工学研究科 情報電子工学系専攻），吉野　正樹（北海道職業能力開発大学校 電子情報技術科），佐藤　孝紀（室蘭工業大学大学院 工学研究科 情報電子工学系専攻／室蘭工業大学 環境科学・防災研究センター），伊藤　秀範（室蘭工業大学大学院 工学研究科 情報電子工学系専攻）

著者名(英語): Masahiko Kumadaki (Division of Information and Electronic Engineering, Graduate School of Engineering, Muroran Institute of Technology), Masaki Yoshino (Department of Electronic and Information Technology, Hokkaido Polytechnic College), Kohki Sato (Division of Information and Electronic Engineering, Graduate School of Engineering, Muroran Institute of Technology/Center of Environmental Science and Disaster Mitigation for Advanced Research, Muroran Institute of Technology), Hidenori Itoh (Division of Information and Electronic Engineering, Graduate School of Engineering, Muroran Institute of Technology)

キーワード: SiCN，プラズマCVD法，窒化膜，フーリエ変換型赤外吸収分光法，X線光電子分光法，原子間力顕微鏡　　SiCN，plasma CVD method，nitride films，FT-IR，XPS，AFM

要約(英語): We deposited SiCN thin films by RF plasma CVD (Chemical Vapor Deposition) method using a mixture of Tetramethylsilane (TMS), nitrogen, and hydrogen gas. Deposited films were measured some properties with Fourier-Transform Infrared Spectroscopy (FT-IR), X-ray Photoelectron Spectroscopy (XPS), Ellipsometry and Atomic Force Microscope (AFM). We found that the temperature of substrate increased elimination and absorption reaction on the surface, and a fine film could be deposited at the temperature of 973K. To deposit SiCN with lower temperature, we changed H2 flow rate. As results, we found that H2 flow rate had great influence on the efficiency of decomposition of TMS. Moreover, the roughness of substrate was affected by the mixture rate of TMS. We could obtain the films nearly similar to the 973K ones at the state of 100Pa of pressure, 773K of substrate temperature, 80sccm of H2 flow rate, and TMS mixture rate of 3% to 5%. In particular, 5% of TMS mixture rate could be considered as the best condition on this experiment.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.134 No.10 （2014）

本誌掲載ページ: 538-544 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/134/10/134_538/_article/-char/ja/