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Cooling Effect on Photoluminescence Spectrum from GaN Thin Film Exposed in Argon Plasma

Cooling Effect on Photoluminescence Spectrum from GaN Thin Film Exposed in Argon Plasma

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カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2014/12/01

タイトル(英語): Cooling Effect on Photoluminescence Spectrum from GaN Thin Film Exposed in Argon Plasma

著者名: Daisuke Ogawa (Chubu University), Keiji Nakamura (Chubu University)

著者名(英語): Daisuke Ogawa (Chubu University), Keiji Nakamura (Chubu University)

キーワード: in-situ damage monitoring,gallium nitride,argon plasma,film cooling

要約(英語): This journal article shows the effect of cooling with liquid nitrogen on a gallium nitride (GaN) film that is exposed in argon plasma. We evaluated the damage induced by plasma on a n-GaN film (2µm) with photoluminescence (PL). Our preliminary result shows that the PL intensity less than 450nm stayed almost constant only when the film was cooled down with liquid nitrogen. This can be an indication that the damages induced by plasma can be avoided for the wavelength less than 450nm by cooling the film.

本誌: 電気学会論文誌A(基礎・材料・共通部門誌) Vol.134 No.12 (2014) 特集:放電研究の最新動向

本誌掲載ページ: 642-643 p

原稿種別: 研究開発レター/英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/134/12/134_642/_article/-char/ja/

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