MOD法プリカーサ薄膜の減圧焼成で得たVOx薄膜の特性評価

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2015/08/01

タイトル(英語): Evaluation of Characteristics in VOx Thin Films Obtained by Reduced-Pressure Firing of Precursor Films Fabricated by MOD

著者名: 内田　貴司（防衛大学校 電気電子工学科），笠井　博幸（防衛大学校 電気電子工学科），立木　隆（防衛大学校 電気電子工学科）

著者名(英語): Takashi Uchida (Department of Electrical and Electronic Engineering, National Defense Academy), Hiroyuki Kasai (Department of Electrical and Electronic Engineering, National Defense Academy), Takashi Tachiki (Department of Electrical and Electronic Engineering, National Defense Academy)

キーワード: 有機金属分解（MOD）法，酸化バナジウム（VOx）薄膜，ボロメータ検出器，相転移　　metal-organic decomposition (MOD)，vanadium oxide (VOx) thin films，bolometer detectors，phase transition

要約(英語): VOx precursor thin films were fabricated by metal-organic decomposition (MOD). Then, the films were fired with a temperature of 500-720℃, time of 5-20 min and pressure of 1.2-10 Pa in O2 and the air (O2: 21%). The composition of VOx thin films, after the precursor films were fired at 650℃ for 10 min, changed as V2O5 → V3O7 → V6O13 → VO2 with decreasing the firing pressure in O2. A phase transition (metal-insulator transition: MIT) was observed for the VOx thin film containing VO2 in R-T characteristic. However, the electrical properties were poor. On the other hand, VOx thin film after the precursor films were fired at 650℃ for 10 min under the pressure of 1.2 Pa in the air exhibited an abrupt transition, with a resistance change of 3 orders of magnitude, and a temperature coefficient of resistance (TCR) was 4.6 %/K. Furthermore, the VOx film also exhibited an electrically triggered MIT in I-V characteristic and a switching operation with a threshold voltage of ∼6.0 V. These characteristics obtained by the VOx thin film are applicable to bolometer detectors and switch devices.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.135 No.8 （2015）

本誌掲載ページ: 481-487 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/135/8/135_481/_article/-char/ja/