4H-SiC中の転位組織の放射光トポグラフ法による解析

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2015/12/01

タイトル(英語): Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-ray Topography

著者名: 松畑　洋文（産業技術総合研究所 先進パワーエレクトロニクス研究センター），山口　博隆（産業技術総合研究所 先進パワーエレクトロニクス研究センター），関口　隆史（物資・材料研究機構 国際ナノアーキテクトニクス研究拠点），陳　斌（産業技術総合研究所 先進パワーエレクトロニクス研究センター／物資・材料研究機構 国際ナノアーキテクトニクス研究拠点），佐々木　雅之（日鉄住金テクノロジー（株）），大野　俊之（産業技術総合研究所 先進パワーエレクトロニクス研究センター／（株）日立製作所 研究開発グループ），鈴木　拓馬（

著者名(英語): Hirofumi Matsuhata (Advanced Industrial Science and Technology), Hirotaka Yamaguchi (Advanced Industrial Science and Technology), Takashi Sekiguchi (International Center for Materials Namoarchitectonics), Bin Chen (Advanced Industrial Science and Technology /International Center for Materials Namoarchitectonics), Masayuki Sasaki (Nittetsu Sumikin Technology), Toshiyuki Ohno (Advanced Industrial Science and Technology /Hitachi Ltd.), Takuma Suzuki (Toshiba Corporation), Tetsuo Hatakeyama (Toshiba Corporation), Takashi Tsuji (Advanced Industrial Science and Technology), Yoshiyuki Yonezawa (Advanced Industrial Science and Technology), Kazuo Arai (Advanced Industrial Science and Technology)

キーワード: 放射光X線トポグラフ法，ベルク・バレット法，4H-SiCウエハ，転位，エピタキシー膜，4H-SiC電力素子　　synchrotron X-ray topography，Berg-Barrett topography，4H-SiC wafer，dislocation，epitaxy-film，4H-SiC power device

要約(英語): Current 4H-SiC wafers contain certain amount of dislocations, stacking faults and other lattice-defects. These defect structures evolve during various processes for power device fabrication. It is very important to examine evolutions of dislocation structures during power device processes, as well as the effect of dislocations on performances of fabricated power devices. Since lattice defects can be observed at only subsurface regions selectively by Berg-Barrett X-ray topography, we have applied this useful observation technique to 4H-SiC technology to solve various technological issues. Appearances of scratch-like surface morphology after epi-film growth on very flat substrate surface by CMP were examined by this technique, and the mechanism was discussed. Analysis of dislocation structure evolutions during epi-film growth, also basal-plane dislocation glide by recombination of electrons and holes were discussed. Effects of threading screw dislocations on reliability of MOS structures, and on current leakage in pn-junction under reversed bias condition were investigated and discussed. Various important suggestions for 4H-SiC industries were obtained.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.135 No.12 （2015） 特集：スマートな社会を支える最新計測技術

本誌掲載ページ: 768-779 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/135/12/135_768/_article/-char/ja/