集光型コヒーレント回折イメージング法によるEUVマスク上の欠陥評価法の開発

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2017/05/01

タイトル(英語): Development of an EUV Microscope with Focused Coherent EUV based on Coherent Diffraction Imaging Method for Defect Evaluation on an EUV Mask

著者名: 原田　哲男（兵庫県立大学高度産業科学技術研究所 EUVリソグラフィー研究開発センター），橋本　拓（兵庫県立大学高度産業科学技術研究所 EUVリソグラフィー研究開発センター），渡邊　健夫（兵庫県立大学高度産業科学技術研究所 EUVリソグラフィー研究開発センター）

著者名(英語): Tetsuo Harada (LASTI, Center for EUV Lithography, University of Hyogo), Hiraku Hashimoto (LASTI, Center for EUV Lithography, University of Hyogo), Takeo Watanabe (LASTI, Center for EUV Lithography, University of Hyogo)

キーワード: 極端紫外線，EUVリソグラフィー，コヒーレント回折イメージング，タイコグラフィー，欠陥観察　　extreme ultraviolet，EUV lithography，coherent diffraction imaging，ptychography，defect observation

要約(英語): For evaluation of defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140-nm focus diameter on the defect using a Fresnel zoneplate. This system directly observes the reflection and diffraction signals from a phase defect. The phase and the intensity image of the defect is reconstructed with the diffraction images using ptychography, which is an algorithm of the coherent diffraction imaging. We observed programmed phase defect on a blank EUV mask. Phase distributions of these programmed defect were well reconstructed quantitatively. We also observed actual defects which was inspected by the ABI tool. Actual amplitude defect and phase defect images were reconstructed with intensity and phase contrast. The reconstructed image indicated the defect type of these defect. The micro-CSM is very powerful tool to evaluate an EUV phase defect.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.137 No.5 （2017） 特集：革新的な光応用技術

本誌掲載ページ: 260-264 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/137/5/137_260/_article/-char/ja/