透明p型半導体NiOの電気化学堆積

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2017/09/01

タイトル(英語): Electrochemical Deposition of Transparent p-type Semiconductor NiO

著者名: Bayingaerdi　Tong（名古屋工業大学大学院工学研究科機能工学専攻），市村　正也（名古屋工業大学大学院工学研究科機能工学専攻）

著者名(英語): Bayingaerdi Tong (Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology), Masaya Ichimura (Dept. Eng. Phys., Electronics, Mech., Nagoya Institute of Technology)

キーワード: 電気化学堆積（ECD）法，NiO薄膜，透明p型半導体　　electrochemical deposition (ECD) method，NiO thin film，transparent p-type semiconductor

要約(英語): NiO is a p-type semiconductor having a large band gap (> 3 eV). In this study, thin films containing Ni-O were deposited by the cathodic electrochemical deposition method, and characteristics change by heat treatment was investigated. An aqueous solution containing Ni(NO3)2 was used as a deposition solution. X-ray photoelectron spectroscopy showed that the sample before annealing was predominantly Ni(OH)2. After heat treatment in air at temperatures higher than 300oC, the NiO phase was observed by X-ray diffraction, and the p-type response was confirmed by the photoelectrochemical measurement. The band gap obtained from the light transmittance measurement was around 3.5eV.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.137 No.9 （2017） 特集：電気電子工学関連分野における教育フロンティア

本誌掲載ページ: 542-546 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/137/9/137_542/_article/-char/ja/