イオン化蒸着法によるダイヤモンド状炭素の成膜と集束イオンビームによるデバイスの作製

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2017/10/01

タイトル(英語): Synthesis of Diamond Like Carbon Films Deposited by the Ionization Vapor Method and Development of its Semiconductive Devices Fabricated by the Focused Ga-ion Beam Implantation

著者名: 胡桃　聡（日本大学理工学部），高原　裕介（日本大学理工学部），大野　貴史（日本大学理工学部），松田　健一（日本大学理工学部），鈴木　薫（日本大学理工学部）

著者名(英語): Satoshi Kurumi （College of Science and Technology, Nihon Unversity）, Yusuke Takahara （College of Science and Technology, Nihon Unversity）, Takafumi Ohno （College of Science and Technology, Nihon Unversity）, Ken-ichi Matsuda （College of Science and Technology, Nihon Unversity）, Kaoru Suzuki （College of Science and Technology, Nihon Unversity）

キーワード: ダイヤモンド状炭素，ショットキーダイオード，集束イオンビーム　　diamond-like carbon，Schottky diode，focused ion beam

要約(英語): In this study, we have attempted to synthesize the Gallium-implanted diamond-like carbon (DLC) film for new functional devices as substituting Si based materials. Intrinsic-DLC films (energy gap: 1.45eV) were deposited by the ionization vapor method with applying the negative pulsed-bias voltage (frequency: 2kHz, duty ratio: 30%, peak voltage: 500V) to SiO2 substrates. Gallium (Ga) atoms were implanted to i-DLC films as accepters utilizing by focused ion beam irradiation system. The Raman scattering spectra of i-DLC and Ga-DLC films showed typical DLC characteristics which consisted of I(D) and I(G) peaks. In order to evaluate working function of the Ga-DLC film, several electrode materials (Au, Pt, Cu, Al and Sn) were deposited on the films. Current-voltage characteristics of Au and Pt electrodes on Ga-DLC films showed Ohmic-contacts, and Cu, Al and Sn electrodes were Schottoky-contacts. These results suggested that a work function of the Ga-DLC film was in the range of 4.47eV to 4.58eV. To apply these contact properties to DLC semiconductive devices, we produced the DLC Schottoky-diode using Al and Pt electrodes deposited on the Ga-DLC film. A current-voltage characteristic of DLC Schottoly-diode showed diode property which amount of a forward voltage and a backward voltage were 7.0V and 17.0V respectively. The ideality factor n of produced diode was 11.3.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.137 No.10 （2017）

本誌掲載ページ: 584-589 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/137/10/137_584/_article/-char/ja/