フレキシブル基板上有機薄膜太陽電池における電子輸送層の検討

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2018/08/01

タイトル(英語): Study of Electron Transport Layer in Organic Photovoltaic Cell on Flexible Substrate

著者名: 小堀　稔文（キヤノン電子（株）材料研究所），福田　武司（積水化学工業（株）），鎌田　憲彦（埼玉大学大学院理工学研究科）

著者名(英語): Toshifumi Kobori (Institute for Materials, Canon Electronics Inc.), Takeshi Fukuda (Sekisui Chemical Ltd.), Norihiko Kamata (Graduate School of Science and Engineering, Saitama University)

キーワード: 有機薄膜太陽電池，PEN基板，PTB7-Th，ZnOゾル-ゲル膜，ZnOナノ粒子膜，PFN_x000D_　　organic photovoltaic cell，PEN substrate，PTB7-Th，sol-gel derived ZnO film，ZnO nano-particle film，PFN

要約(英語): In this stduy, we investigated the effect of electron transport layer (ETL) on performances of inverted organic photovoltaic cells (OPVs) fabricated on flexible polyethylene naphthalate (PEN) substrates using poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thio-hene)-2-carboxylate-2-6-diyl)] and [6,6]-phenyl C71-butyric acid methyl ester blend film as a photoactive layer. The photoconversion efficiency (PCE) of 5.92% was observed when using the sol-gel derived ZnO ETL, and was lower than that of reference device on a glass substrate (9.51%). In addition, a light soaking effect (LSE) and a relatively flat ZnO film surface were observed only the case of PEN substrate. This indicates that large number of defects in ZnO were generated due to the slow polycondensation speed of the sol-gel precursor solution when the PEN substrate was used and the carrier transport is inefficient. By using the nano-particle ZnO and the poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) as ETLs, the short circuit current density and fill factor were improved due to the reduced LSE compared when the sol-gel derived ZnO film was used. This result indicates that one reason of inferior OPV characteristics with the sol-gel derived ZnO ETL comes from the inhibition of electron transport/extraction due to the incomplete ZnO structure. As a result, we realized the highest PCE of 8.71% on the flexible PEN substrate.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.138 No.8 （2018）

本誌掲載ページ: 428-434 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/138/8/138_428/_article/-char/ja/