MOD法によりSi3N4/SiO2メンブレン上に製作したVOxマイクロボロメータの特性評価

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2018/09/01

タイトル(英語): Evaluation of Characteristics in VOx Microbolometer Fabricated by MOD on Si3N4/SiO2 Membrane

著者名: 前田　幸平（防衛大学校 電気電子工学科），Van Nhu　Hai（防衛大学校 電気電子工学科），西岡　國生（東京工業大学 技術部 マイクロプロセス部門），松谷　晃宏（東京工業大学 技術部 マイクロプロセス部門），立木　隆（防衛大学校 電気電子工学科），内田　貴司（防衛大学校 電気電子工学科）

著者名(英語): Kohei Maeda (National Defense Academy), Van Nhu Hai (National Defense Academy), Kunio Nishioka (Tokyo Institute of Technology), Akihiro Matsutani (Tokyo Institute of Technology), Takashi Tachiki (National Defense Academy), Takashi Uchida (National Defense

キーワード: 有機金属分解（MOD）法，酸化バナジウム（VOx），マイクロボロメータ，メンブレン，Deep-RIE　　metal-organic decomposition (MOD)，vanadium oxide (VOx)，microbolometers，membranes，Deep-RIE

要約(英語): VOx thin films were fabricated on Si3N4/SiO2/Si substrates by firing precursor films, which were fabricated by metal-organic decomposition (MOD), with a reduced pressure. Resistance-temperature (R-T) characteristics of the films indicating the phase transition from metal to insulator with about 4 orders of resistance change specified with VO2(M) were obtained. Furthermore, the films fabricated with a firing temperature of 580 ～ 600 ℃ had temperature coefficient of resistance (TCR) of -2.8 ～ -2.9 %/K at room temperature. After fabricating VOx microbolometers with 40×10 μm2 using the films on Si3N4/SiO2/Si substrates, Si with a thickness of about 340 μm was etched using Deep-RIE and XeF2 vapor etching from the backside of the substrate. Then, the VOx microbolometer was completed on Si3N4/SiO2 membrane. The VOx microbolometer on Si3N4/SiO2 membrane had a high DC sensitivity of 2310 W-1, which was about 15 times higher than that of the microbolometer on the Si3N4/SiO2/Si substrate.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.138 No.9 （2018）

本誌掲載ページ: 471-477 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/138/9/138_471/_article/-char/ja/