スメクチックE相における電荷輸送の律速過程

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2020/05/01

タイトル(英語): Origin of Charge Carrier Transport Properties in Smectic E Phase

著者名: 新田　武父（東京工業大学 科学技術創成研究院 未来産業技術研究所），臼井　孝之（東京工業大学 科学技術創成研究院 未来産業技術研究所），飯野　裕明（東京工業大学 科学技術創成研究院 未来産業技術研究所），大野　玲（東京工業大学 科学技術創成研究院 未来産業技術研究所），半那　純一（東京工業大学 科学技術創成研究院 未来産業技術研究所）

著者名(英語): Takenori Nitta (Laboratory for Future Interdisciplinary Research in Science and Technology (FIRST), Institute of Innovative Research, Tokyo institute of Technology), Takayuki Usui (Laboratory for Future Interdisciplinary Research in Science and Technology (FIRST), Institute of Innovative Research, Tokyo institute of Technology), Hiroaki Iino (Laboratory for Future Interdisciplinary Research in Science and Technology (FIRST), Institute of Innovative Research, Tokyo institute of Technology), Akira Ohno (Laboratory for Future Interdisciplinary Research in Science and Technology (FIRST), Institute of Innovative Research, Tokyo institute of Technology), Jun-ichi Hanna (Laboratory for Future Interdisciplinary Research in Science and Technology (FIRST), Institute of Innovative Research, Tokyo institute of Technology)

キーワード: 電荷輸送特性，スメクチック相，Gaussian Disorder Model，Marcus理論，有機半導体，移動度　　carrier transport properties，smectic phase，Gaussian disorder model，Marcus theory，organic semiconductor，mobility

要約(英語): We have identified liquid crystalline phase emerged in an alkoxyalkl derivative of phenylbenzothienobenzothiphene (Ph-BTBT), i.e., 2-(propoxybutyl)-7-phenylbenzothienobenzithiophene Ph-BTBT-4O-3, and studied its charge carrier transport properties by Time-of-Flight experiments. Ph-BTBT-4O-3 exhibited smectic E phase (SmE) at a wide temperature range of -130 to 200 ℃ over 300 K, and its hole mobility was determined as a function of temperature and electric field. At the low temperature range lower than room temperatures, hole mobility exhibited Poole-Frenkel like dependence and carrier transport properties characterized by 81 meV for a Gaussian width of the density of states. On the other hand, hole mobility did not depend on electric field at the range beyond the room temperatures up to 200 ℃ and exhibited Arrhenius type of activation energy of 0.11 eV, from which we estimated reorganization energy of 0.44 eV. We discuss the present results in comparison with the previous results from 2-(thiopropoxybutyl)-7-phenylbenzothienobenzithiophene (Ph-BTBT-4S-3).

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.140 No.5 （2020）

本誌掲載ページ: 292-298 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/140/5/140_292/_article/-char/ja/