MOD法によるNb, Ta添加VO2薄膜における相転移温度の低温化

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2022/05/01

タイトル(英語): Lowering of Phase Transition Temperature for Nb or Ta Doped VO2 Thin Films Grown by MOD

著者名: 和田　英男（大阪工業大学 ナノ材料マイクロデバイス研究センター），扶川　泰斗（大阪工業大学 ナノ材料マイクロデバイス研究センター），豊田　和晃（大阪工業大学 ナノ材料マイクロデバイス研究センター），小池　一歩（大阪工業大学 ナノ材料マイクロデバイス研究センター），河原　正美（（株）高純度化学研究所）

著者名(英語): Hideo Wada (Osaka Institute of Technology), Taito Fukawa (Osaka Institute of Technology), Kazuaki Toyota (Osaka Institute of Technology), Kazuto Koike (Osaka Institute of Technology), Masami Kawahara (Kojundo Chemical Laboratory Co., Ltd.)

キーワード: 有機金属分解 (MOD) 法，二酸化バナジウム (VO2)，スマートウィンドウ，相転移温度，FDTD_x000D_　　metal-organic decomposition (MOD)，vanadium dioxide (VO2)，smart window，phase transition temperature，FDTD

要約(英語): Nb or Ta doped vanadium dioxide (VO2) thin films were grown on r-plane sapphire substrates by a metal-organic decomposition (MOD) method. Their crystallinities of the VO2 thin films were evaluated by XRD, AFM and XPS. It was clarified that polycrystalline fine particles having a moth-eye structure were grown and Nb or Ta ions were gradually replaced by V sites in all the samples. Moreover, it was found that the phase transition temperature measured by a spectrometer indicated 61-39℃ for Nb doped samples and 57-47℃ for Ta doped samples by doping from 1 to 3 mol%. The change in transmittance before and after the phase transition temperature tended to widen the transition temperature range as the doping concentration increases due to the gradual phase transition change. It was considered that the dopant of Nb or Ta ions added to replace V sites had an effective role on changing the phase transition phenomenon of VO2. Furthermore, FDTD simulation for nanoscale porous moth-eye structure VO2 thin films was carried out to compare with the data measured by a spectrometer, and it was in good agreement.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.142 No.5 （2022） 特集：量子コンピュータ周辺回路としての低温デジタル回路

本誌掲載ページ: 221-228 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/142/5/142_221/_article/-char/ja/