Formation of Periodic Surface Structures on Semiconductors under Mid-Infrared Free-Electron Laser Irradiation

カテゴリ: 論文誌(論文単位)

グループ名: 【A】基礎・材料・共通部門

発行日: 2023/10/02

タイトル(英語): Formation of Periodic Surface Structures on Semiconductors under Mid-Infrared Free-Electron Laser Irradiation

著者名: Shin-ichiro Masuno (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University), Masaki Hashida (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University/Research Institute of Science and Technology, Tokai University), Heishun Zen (Institute of Advanced Energy, Kyoto University)

著者名(英語): Shin-ichiro Masuno (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University), Masaki Hashida (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University/Research Institute of Science and Technology, Tokai University), Heishun Zen (Institute of Advanced Energy, Kyoto University)

キーワード: laser-induced periodic surface structures，laser ablation，mid-infrared laser，free-electron laser

要約(英語): In understanding the formation mechanism of laser-induced periodic surface structures (LIPSS), the dependence of the LIPSS formation threshold fluence F// on the material properties is crucial. In this work, the LIPSS generated upon the irradiation of various semiconductor materials with a train of 11.4 μm femtosecond laser pulses were examined. The laser source was a Mid-infrared free-electron laser (MIR-FEL). Eight semiconductor substrates (i.e., Si, Ge, ZnO, SiC-4H, GaP, GaN, CdTe, and SiO2) were used as the targets. On Si, Ge, SiC-4H, and GaN, the LIPSS were oriented parallel to the MIR-FEL polarization with interspaces of 1/8 to 1/4 of the MIR-FEL wavelength λFEL. These interspaces tended to match the wavelength of the second harmonic of the MIR-FEL light propagating in the substrates. The obtained F// were relatively correlated with the bandgap energies of materials, as were those for near-infrared femtosecond lasers. Another type of LIPSS oriented perpendicular to the MIR-FEL polarization with interspaces of λFEL to λFEL/9 was also observed in the same spot on SiC-4H or GaN at higher fluences than only //-LIPSS was formed.

本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.143 No.10 （2023） 特集：未来社会に向けた先端光応用・視覚技術II

本誌掲載ページ: 320-324 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/143/10/143_320/_article/-char/ja/