次世代パワーエレクトロニクスの研究動向

カテゴリ: 論文誌(論文単位)

グループ名: 【B】電力・エネルギー部門

発行日: 2012/03/01

タイトル(英語): Recent Trend in Next Generation Power Electronics R&D

著者名: 山口　浩（(独) 産業技術総合研究所）

著者名(英語): Hiroshi Yamaguchi (National Institute of Advanced Industrial Science and Technology (AIST))

キーワード: ワイドギャップ半導体，SiC，GaN，パワーデバイス，パワーエレクトロニクス，技術動向　　wide-gap semiconductor，SiC，GaN，power device，power electronics，technical trend

要約(英語): The energy management technology has been occupying the attention due to the requests for the high-efficiency energy use. Especially, the electric power management is the key issue in order to achieve the high-efficiency energy generation, transmission, distribution, and consumption. Therefore, the progress in power electronics technology is very important, as the power electronics technology offers the function of efficient electric power control. The wide-gap semiconductor is the promising technology in the field of the power electronics which is now based on the Si devices. In this manuscript, the recent technical trend in the field of power electronics R&D is explained from the viewpoint of wide-gap semiconductor application.

本誌: 電気学会論文誌B（電力・エネルギー部門誌） Vol.132 No.3 （2012）

本誌掲載ページ: 209-212 p

原稿種別: 解説／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejpes/132/3/132_3_209/_article/-char/ja/