20nm MOSFETにおけるソース・ドレイン抵抗の電気特性パラメータへの影響

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2011/11/01

タイトル(英語): Effects of Source and Drain Resistances on Analytical Model Parameters for 20nm MOSFETs

著者名: 尹　鍾鐵（京都工芸繊維大学大学院工芸科学研究科），中出　育成（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科），井上　史貴（京都工芸繊維大学大学院工芸科学研究科），冨山　賢司（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Jong Chul Yoon (Graduate School of Science and Technology, Kyoto Institute of Technology), Yasunari Nakade (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology), Fumitaka Inoue (Graduate School of Science and Technology, Kyoto Institute of Technology), Kenji Tomiyama (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: ソース・ドレイン抵抗，20nm MOSFET，チャネル長変調係数，MOSFET解析モデル　　source and drain resistances，20nm MOSFET，channel length modulation coefficient，analytical MOSFET model

要約(英語): In this work, the effects of source and drain resistances (RS, RD) on device characteristics are investigated for sub-20nm MOSFETs. The current driving capability is calculated for several structures such as planar bulk, SOI, and Multi gate MOSFETs by using the ITRS data. It is found that the degradation of the drain currents due to RS and RD becomes significant as the gate lengths are scale down to sub-20nm region. In order to investigate the effects of RS and RD on the device parameters such as the channel length modulation coefficient λ and the saturation drain current IDSAT, the drain currents are simulated by using the circuit simulation. The intrinsic MOSFET model parameters were extracted from the experimental ID-VD characteristic of 20nm nMOSFET. The source and drain resistances are changed from 0 to 100 ohm. It is found that the degradation of IDSAT due to RS and RD shows the linear gate voltage dependence. For the long channel MOSFET, the degradation of λ shows the linear gate voltage dependence. On the contrary, for the short channel MOSFET, the degradation of λ shows the little gate voltage dependence.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.131 No.11 （2011） 特集：電気関係学会関西連合大会

本誌掲載ページ: 1833-1837 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/131/11/131_11_1833/_article/-char/ja/