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Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

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カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2013/06/01

タイトル(英語): Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

著者名: Durga Prasad Sapkota (Chubu University), Madhu Sudan Kayastha (Chubu University), Koichi Wakita (Chubu University)

著者名(英語): Durga Prasad Sapkota (Chubu University), Madhu Sudan Kayastha (Chubu University), Koichi Wakita (Chubu University)

キーワード: Quantum well,AlGaInAs,Threshold current density,Characteristic temperature

要約(英語): The well composition dependence of threshold current density (Jth) for a GRIN SCH AlGaInAs/InP 1.5% compressive strained single quantum well (SQW) laser operating at 1.55μm has been studied. High electron confinement energy of 0.25eV was obtained at a lower well composition of 0.09 with 7.1nm thick well. The threshold current density Jth has been calculated as a function of temperature. A minimum of Jth of 121Acm-2 was obtained for the devices with Al0.09Ga0.17In0.74As well, which is the lowest value ever reported at this wavelength. The characteristic temperature (T0) has been estimated to be 112 K from the Jth as a function of temperature.

本誌: 電気学会論文誌C(電子・情報・システム部門誌) Vol.133 No.6 (2013) 特集:非線形システムのモデル化・制御理論・応用の最前線

本誌掲載ページ: 1139-1144 p

原稿種別: 論文/英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/133/6/133_1139/_article/-char/ja/

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