Ni/Si系におけるNiSi2相の低温形成

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2015/07/01

タイトル(英語): Low-temperature Formation of NiSi2 Phase in Ni/Si System

著者名: 野矢　厚（北見工業大学），武山　眞弓（北見工業大学）

著者名(英語): Atsushi Noya (Kitami Institute of Technology), Mayumi B. Takeyama (Kitami Institute of Technology)

キーワード: シリサイド，マルチフェーズ，固相反応，低温形成，NiSi，NiSi2　　silicide，multiphase，solid-phase reaction，low-temperature formation，NiSi，NiSi2

要約(英語): The silicide phase formation is examined in the Ni/Si system. The multiphase of NiSi and NiSi2 is confirmed in the specimen, in which a 30-nm-thick Ni film is sputter-deposited on Si(100) at 350℃ and subsequently annealed at 400℃ for 1 h. This is interpreted that the NiSi and NiSi2 phases nucleate from the amorphous alloys, as a super-cooled melt, at the composition corresponding to those of eutectic points in different composition, which appear in the intermixed Ni-Si alloy layer with a Ni concentration gradient owing to intermixing between Ni and Si at the interface. To confirm this consideration, we execute the Ni deposition on a 350℃-heated Si substrate with a thin SiO2 layer. The result indicates the direct formation of NiSi2 in a non-uniform fashion. This is because the thin SiO2 layer suppresses the Ni diffusion into Si, resulting in the formation of a Ni-Si alloy in a Si-rich composition, from which NiSi2 nucleates at a low temperature. We can demonstrate that the high-temperature phase of NiSi2 nucleates by the kinetic constraint from the amorphous alloy of suitable composition.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.135 No.7 （2015） 特集：平成26 年電子・情報・システム部門大会

本誌掲載ページ: 723-727 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/135/7/135_723/_article/-char/ja/