TSVプロセスに適用可能な反応性スパッタ法を用いたSiNx膜の低温作製
TSVプロセスに適用可能な反応性スパッタ法を用いたSiNx膜の低温作製
カテゴリ: 論文誌(論文単位)
グループ名: 【C】電子・情報・システム部門
発行日: 2015/07/01
タイトル(英語): Low-temperature Deposition of Reactively-sputtered SiNx Films Applicable to TSV Process
著者名: 佐藤 勝(北見工業大学 電気電子工学科),武山 眞弓(北見工業大学 電気電子工学科),小林 靖志((株)富士通研究所),中田 義弘((株)富士通研究所),中村 友二((株)富士通研究所),野矢 厚(北見工業大学 電気電子工学科)
著者名(英語): Masaru Sato (Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology), Mayumi B. Takeyama (Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology), Yasushi Kobayashi (Fujitsu Laboratories Ltd.), Yoshihiro Nakata (Fujitsu Laboratories Ltd.), Tomoji Nakamura (Fujitsu Laboratories Ltd.), Atsushi Noya (Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology)
キーワード: シリコン貫通ビア,SiNx膜,低温作製,反応性スパッタ,3次元LSI through Silicon via,SiNx film,low deposition temperature,reactive sputtering,3-dimensional LSI
要約(英語): In the through Silicon via (TSV) process as a key technology for the 3-dimensional LSI, particularly in the ‘via-last process', SiNx films of high density are strongly required to prepare at low deposition temperatures. It, however, is generally known that the SiNx film prepared at low temperatures shows low film density, resulting in poor insulating barrier properties. As a solution of this issue, we propose the use of the SiNx films deposited by reactive sputtering. We can obtain the sputtered SiNx films of high density (2.78∼2.99 g/cm3) in spite of the deposition without substrate heating. The 20-nm-thick SiNx films succeed the experimental check on the barrier properties against Cu diffusion upon annealing at 700℃ for 1 h. The films also show good step-coverage for a TSV with an aspect ratio of 1.5. The SiNx films prepared by reactive sputtering are a candidate for a good insulating barrier applicable to the via-last TSV process.
本誌: 電気学会論文誌C(電子・情報・システム部門誌) Vol.135 No.7 (2015) 特集:平成26 年電子・情報・システム部門大会
本誌掲載ページ: 728-732 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/135/7/135_728/_article/-char/ja/
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