半導体デバイスの誤点弧メカニズムに関する解析
半導体デバイスの誤点弧メカニズムに関する解析
カテゴリ: 論文誌(論文単位)
グループ名: 【C】電子・情報・システム部門
発行日: 2015/07/01
タイトル(英語): An Analysis of False Turn-On Mechanism on Semiconductor Devices
著者名: 西垣 彰紘(島根大学総合理工学部),梅上 大勝(島根大学総合理工学部),三島 大地(島根大学総合理工学部),服部 文哉(島根大学総合理工学部),山本 真義(島根大学総合理工学部)
著者名(英語): Akihiro Nishigaki (Dept. of Interdisciplinary Faculty of Science and Engineering, Shimane University), Hirokatsu Umegami (Dept. of Interdisciplinary Faculty of Science and Engineering, Shimane University), Taichi Mishima (Dept. of Interdisciplinary Faculty of Science and Engineering, Shimane University), Fumiya Hattori (Dept. of Interdisciplinary Faculty of Science and Engineering, Shimane University), Masayoshi Yamamoto (Dept. of Interdisciplinary Faculty of Science and Engineering, Shimane University)
キーワード: パワー半導体デバイス,誤点弧現象,GaN,SiC,高周波駆動 Power semiconductor devices,False turn-on phenomenon,Gallium nitride,Silicon carbide,High-frequency operation
要約(英語): This paper analyzes the gate noise performance using simulation and experimental test focused on parasitic inductances of power semiconductor devices' terminals. The gate noise which is over the threshold voltage makes non-active FETs turn on and leads the FETs to a breakdown. Next generation devices which have very high speed switching characteristic are difficult to be dealt with due to the false turn-on problem. The false turn-on mechanism in conventional theory is related to parasitic capacitors and a gate resistor and false turn-on occurs by the current flowing through a reverse transfer capacitor. However, the novel mechanism we proposed is mainly linked to parasitic inductors and recovery current and a non-active FET is switched on due to the oscillation which the energy charged by the current flowing from the source to the gate makes. We verified our theory by experiments, simulations and simplistic circuit equations.
本誌: 電気学会論文誌C(電子・情報・システム部門誌) Vol.135 No.7 (2015) 特集:平成26 年電子・情報・システム部門大会
本誌掲載ページ: 769-775 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/135/7/135_769/_article/-char/ja/
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