ジナフトチエノチオフェン薄膜トランジスタにおけるコンタクトドーピング効果の実験的・数値的検討

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2017/01/01

タイトル(英語): Experimental and Numerical Investigation of Contact Doping Effects in Dinaphthothienothiophene Thin-Film Transistors

著者名: 山本　亮（慶應義塾大学 理工学部 電子工学科），野田　啓（慶應義塾大学 理工学部 電子工学科），和田　恭雄（慶應義塾大学 理工学部 電子工学科），鳥谷部　達（東洋大学）

著者名(英語): Ryo Yamamoto (Department of Electronics and Electrical Engineering, Keio University), Kei Noda (Department of Electronics and Electrical Engineering, Keio University), Yasuo Wada (Department of Electronics and Electrical Engineering, Keio University), Toru Toyabe (Toyo University)

キーワード: 有機薄膜トランジスタ，ジナフトチエノチオフェン，コンタクトドーピング，デバイスシミュレーション，キャリア密度　　organic thin-film transistors，dinaphthothienothiophene (DNTT)，contact doping，device simulation，carrier concentration

要約(英語): Contact doping effects in p-channel dinaphthothienothiophene (DNTT) thin-film transistors with a bottom-gate, top-contact configuration were investigated with both experimental and numerical approach. Characteristic variation in transistor parameters such as the gate threshold voltage and the field-effect mobility for devices with various channel lengths was suppressed by the contact doping with tetrafluorotetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. The gate-voltage dependence of contact resistance and channel resistance was also evaluated separately to examine the contact doping effect in detail. In addition, device simulation considering a Schottky barrier at a metal/semiconductor interface successfully reproduced the experimental current-voltage characteristics by using a hole concentration of the active DNTT layer in the order of 1017cm-3, which was estimated by capacitance-voltage measurement for a metal/insulator/semiconductor capacitor structure. This study suggests the importance of establishing both the carrier doping and carrier concentration measurements toward realizing practical applications of organic transistors.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.137 No.1 （2017） 大特集：電子・情報・システム部門誌 30周年記念「電子・情報・システム技術によるイノベーション」

本誌掲載ページ: 20-25 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/137/1/137_20/_article/-char/ja/